NVH4L015N065SC1
onsemi
onsemi
SIC MOS TO247-4L 650V
$18.58
Available to order
Reference Price (USD)
1+
$18.57844
500+
$18.3926556
1000+
$18.2068712
1500+
$18.0210868
2000+
$17.8353024
2500+
$17.649518
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the NVH4L015N065SC1 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVH4L015N065SC1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 25mA
- Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Fairchild Semiconductor
FQU2N50BTU
IXYS
IXFP5N100P
Infineon Technologies
SPP07N60C3XKSA1
Infineon Technologies
IPB039N10N3GE8187ATMA1
NTE Electronics, Inc
NTE2399
onsemi
2N7002KT1G
Vishay Siliconix
SI7634BDP-T1-GE3
IXYS
IXFA22N65X2-TRL
NTE Electronics, Inc
NTE2386
Panasonic Electronic Components