NVH4L020N090SC1
onsemi
onsemi
SIC MOSFET 900V TO247-4L
$21.21
Available to order
Reference Price (USD)
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$21.21060
500+
$20.998494
1000+
$20.786388
1500+
$20.574282
2000+
$20.362176
2500+
$20.15007
Exquisite packaging
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Optimize your power electronics with the NVH4L020N090SC1 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NVH4L020N090SC1 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 60A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
- FET Feature: -
- Power Dissipation (Max): 484W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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