NVH4L022N120M3S
onsemi
onsemi
SIC MOS TO247-4L 22MOHM 1200V
$22.73
Available to order
Reference Price (USD)
1+
$22.73000
500+
$22.5027
1000+
$22.2754
1500+
$22.0481
2000+
$21.8208
2500+
$21.5935
Exquisite packaging
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The NVH4L022N120M3S from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVH4L022N120M3S for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
- Vgs(th) (Max) @ Id: 4.4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 352W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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