NVH4L040N120SC1
onsemi
onsemi
SICFET N-CH 1200V 58A TO247-4
$23.36
Available to order
Reference Price (USD)
1+
$23.36000
500+
$23.1264
1000+
$22.8928
1500+
$22.6592
2000+
$22.4256
2500+
$22.192
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NVH4L040N120SC1 by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the NVH4L040N120SC1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 319W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Toshiba Semiconductor and Storage
TPHR8504PL,L1Q
onsemi
NTMFS4119NT3G
IXYS
IXFK300N20X3
STMicroelectronics
STL42P6LLF6
Rectron USA
RM27P30LDV
Infineon Technologies
IRF9310TRPBF
Infineon Technologies
IRF250P224
Texas Instruments
CSD17578Q5A
onsemi
NVTFS4C10NWFTAG
Vishay Siliconix