NVMFWS0D4N04XMT1G
onsemi
onsemi
40V T10M IN S08FL GEN 2 PACKAGE
$2.64
Available to order
Reference Price (USD)
1+
$2.63910
500+
$2.612709
1000+
$2.586318
1500+
$2.559927
2000+
$2.533536
2500+
$2.507145
Exquisite packaging
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Meet the NVMFWS0D4N04XMT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVMFWS0D4N04XMT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 197W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerTDFN