NVMJS1D4N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 39A/262A 8LFPAK
$2.77
Available to order
Reference Price (USD)
1+
$2.76624
500+
$2.7385776
1000+
$2.7109152
1500+
$2.6832528
2000+
$2.6555904
2500+
$2.627928
Exquisite packaging
Discount
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The NVMJS1D4N06CLTWG from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVMJS1D4N06CLTWG offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 180W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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