NVMTS1D6N10MCTXG
onsemi
onsemi
PTNG 100V SINGLE NCH PQFN8X8 STD
$3.63
Available to order
Reference Price (USD)
1+
$3.63482
500+
$3.5984718
1000+
$3.5621236
1500+
$3.5257754
2000+
$3.4894272
2500+
$3.453079
Exquisite packaging
Discount
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The NVMTS1D6N10MCTXG from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVMTS1D6N10MCTXG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 291W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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