NVMYS011N04CTWG
onsemi
onsemi
MOSFET N-CH 40V 13A/35A 4LFPAK
$0.84
Available to order
Reference Price (USD)
1+
$0.84081
500+
$0.8324019
1000+
$0.8239938
1500+
$0.8155857
2000+
$0.8071776
2500+
$0.7987695
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the NVMYS011N04CTWG by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVMYS011N04CTWG is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
Renesas Electronics America Inc
NP74N04YUG-E1-AY
Vishay Siliconix
SQM40016EM_GE3
onsemi
EMH1303-TL-E
Alpha & Omega Semiconductor Inc.
AOTF292L
Infineon Technologies
IPB035N08N3GATMA1
Infineon Technologies
AUIRF4104
Taiwan Semiconductor Corporation
TSM085N03PQ33 RGG
Diodes Incorporated
ZVNL110ASTZ
Panjit International Inc.
PJA138L_R1_00001
Diodes Incorporated