NVMYS3D3N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 26A/133A 4LFPAK
$3.17
Available to order
Reference Price (USD)
1+
$3.17000
500+
$3.1383
1000+
$3.1066
1500+
$3.0749
2000+
$3.0432
2500+
$3.0115
Exquisite packaging
Discount
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Upgrade your designs with the NVMYS3D3N06CLTWG by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVMYS3D3N06CLTWG is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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