NVTFWS007N08HLTAG
onsemi
onsemi
80V T8 IN U8FL HEFET PACK
$0.57
Available to order
Reference Price (USD)
1+
$0.56604
500+
$0.5603796
1000+
$0.5547192
1500+
$0.5490588
2000+
$0.5433984
2500+
$0.537738
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NVTFWS007N08HLTAG from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVTFWS007N08HLTAG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 3V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFNW (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
Renesas
HAT2205C-EL-E
onsemi
NVMYS1D6N04CLT1G
Micro Commercial Co
MCB160N04Y-TP
Microchip Technology
APTM100UM60FAG
Diodes Incorporated
DMTH4007LPS-13
Infineon Technologies
IPB016N08NF2SATMA1
Renesas Electronics America Inc
RJK03M3DPA-00#J5A
Renesas
UPA1911ATE(0)-T1-A
Infineon Technologies
IPA050N10NM5SXKSA1
Microchip Technology