NX2301P,215
NXP Semiconductors
NXP Semiconductors
P-CHANNEL 20V 2A (TA) 400MW (TA)
$0.51
Available to order
Reference Price (USD)
3,000+
$0.08796
6,000+
$0.08006
15,000+
$0.07216
30,000+
$0.06821
75,000+
$0.06150
150,000+
$0.05952
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NX2301P,215 single MOSFET from NXP Semiconductors is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the NX2301P,215 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 2.8W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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