NX3008PBKW,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 200MA SOT323
$0.38
Available to order
Reference Price (USD)
3,000+
$0.06376
6,000+
$0.05544
15,000+
$0.04712
30,000+
$0.04435
75,000+
$0.04158
150,000+
$0.03604
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NX3008PBKW,115 by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NX3008PBKW,115 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Alpha & Omega Semiconductor Inc.
AONS21321
Vishay Siliconix
SQJ158EP-T1_GE3
Vishay Siliconix
SQD40081EL_GE3
onsemi
FDD8876
onsemi
2SK4087LS-1E
Microchip Technology
APT10078SLLG
Nexperia USA Inc.
PMV164ENEAR
NXP USA Inc.
BUK652R1-30C,127
Fairchild Semiconductor
HUFA75309D3S
IXYS