NX3020NAKW,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 180MA SOT323
$0.30
Available to order
Reference Price (USD)
3,000+
$0.04301
6,000+
$0.03740
15,000+
$0.03179
30,000+
$0.02992
75,000+
$0.02805
150,000+
$0.02431
Exquisite packaging
Discount
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Enhance your electronic projects with the NX3020NAKW,115 single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s NX3020NAKW,115 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta), 1.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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