NXH200B100H4F2SG
onsemi
onsemi
1500V F2 BOOST FOR SOLAR PIM
$99.59
Available to order
Reference Price (USD)
1+
$99.59000
500+
$98.5941
1000+
$97.5982
1500+
$96.6023
2000+
$95.6064
2500+
$94.6105
Exquisite packaging
Discount
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Experience next-generation power control with onsemi's NXH200B100H4F2SG IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The NXH200B100H4F2SG offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the NXH200B100H4F2SG in your next-generation HVDC systems or particle accelerator power supplies. onsemi delivers reliability where it matters most with the NXH200B100H4F2SG IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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