NXH50M65L4C2SG
onsemi
onsemi
650V 50A CONVERTER-INVERTER-PFCS
$71.74
Available to order
Reference Price (USD)
1+
$71.74000
500+
$71.0226
1000+
$70.3052
1500+
$69.5878
2000+
$68.8704
2500+
$68.153
Exquisite packaging
Discount
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onsemi's NXH50M65L4C2SG stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the NXH50M65L4C2SG enables higher power density in MRI gradient amplifiers. Choose onsemi for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.877 nF @ 20 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 27-PowerDIP Module (1.858", 47.20mm)
- Supplier Device Package: 27-DIP
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