NXH80B120MNQ0SNG
onsemi
onsemi
PIM POWER MODULE
$63.14
Available to order
Reference Price (USD)
1+
$63.14000
500+
$62.5086
1000+
$61.8772
1500+
$61.2458
2000+
$60.6144
2500+
$59.983
Exquisite packaging
Discount
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onsemi's NXH80B120MNQ0SNG sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the NXH80B120MNQ0SNG in your traction inverters or high-energy physics experiments for unparalleled performance. Trust onsemi to deliver cutting-edge IGBT solutions with the NXH80B120MNQ0SNG power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Dual Boost Chopper
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: 69 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)
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