NXH80T120L2Q0SG
onsemi
onsemi
IGBT MODULE 1200V 65A 146W PIM20
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The NXH80T120L2Q0SG from onsemi exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the NXH80T120L2Q0SG in megawatt-level wind turbine converters. With onsemi's proven track record, the NXH80T120L2Q0SG represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: T-Type
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 65 A
- Power - Max: 146 W
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 80A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 1.99 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
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