NXPS20H110C,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - NXPS20H110C - POWER S
$0.26
Available to order
Reference Price (USD)
1+
$0.68000
10+
$0.59400
100+
$0.45540
500+
$0.36000
1,000+
$0.28800
Exquisite packaging
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Engineered for excellence, NXP USA Inc.'s NXPS20H110C,127 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With NXP USA Inc.'s proprietary screening processes, the NXPS20H110C,127 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 110 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6 µA @ 110 V
- Operating Temperature - Junction: 175°C (Max)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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