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NXPSC126506Q

WeEn Semiconductors
NXPSC126506Q Preview
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$6.55
Available to order
Reference Price (USD)
1+
$6.55000
500+
$6.4845
1000+
$6.419
1500+
$6.3535
2000+
$6.288
2500+
$6.2225
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 650 V
  • Capacitance @ Vr, F: 380pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)

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