NXPSC12650B6J
WeEn Semiconductors
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$6.86
Available to order
Reference Price (USD)
1+
$6.86000
500+
$6.7914
1000+
$6.7228
1500+
$6.6542
2000+
$6.5856
2500+
$6.517
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the NXPSC12650B6J single rectifier diode by WeEn Semiconductors. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The NXPSC12650B6J is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose WeEn Semiconductors's NXPSC12650B6J for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Capacitance @ Vr, F: 380pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C (Max)
Related Products
Powerex Inc.
R7S00616XX
GeneSiC Semiconductor
S70KR
Microchip Technology
S4280
Panjit International Inc.
BAS40TS_R1_00001
SanRex Corporation
FRS150BA50
Powerex Inc.
R6001230XXYA
Microchip Technology
ST3010E3
Microchip Technology
JANTX1N6624
Microchip Technology
1N6262
Renesas Electronics America Inc