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NXPSC16650B6J

WeEn Semiconductors
NXPSC16650B6J Preview
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$6.86
Available to order
Reference Price (USD)
1+
$6.86000
500+
$6.7914
1000+
$6.7228
1500+
$6.6542
2000+
$6.5856
2500+
$6.517
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 534pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 175°C (Max)

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