P3D06002G2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 600V 2A TO263-2
$2.10
Available to order
Reference Price (USD)
1+
$2.10000
500+
$2.079
1000+
$2.058
1500+
$2.037
2000+
$2.016
2500+
$1.995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the P3D06002G2 single rectifier diode by PN Junction Semiconductor, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The P3D06002G2 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose PN Junction Semiconductor's P3D06002G2 for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 7A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-263-2
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
Related Products
Semtech Corporation
1N6081
Infineon Technologies
IDC75S120C5X7SA1
Vishay General Semiconductor - Diodes Division
BYG22DHE3_A/I
Vishay General Semiconductor - Diodes Division
VS-35EPF06L-M3
Microchip Technology
1N1200B
Microchip Technology
S4320NL
Microchip Technology
S4240TS
Microchip Technology
JANTXV1N3768R
Renesas Electronics America Inc
HSB83TL-E
GeneSiC Semiconductor