P3D06006E2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 600V 6A TO252-2
$2.50
Available to order
Reference Price (USD)
1+
$2.50000
500+
$2.475
1000+
$2.45
1500+
$2.425
2000+
$2.4
2500+
$2.375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The P3D06006E2 single rectifier diode by PN Junction Semiconductor is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The P3D06006E2 is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. PN Junction Semiconductor's P3D06006E2 is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 18A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-252-2
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
Related Products
Renesas Electronics America Inc
HRW0202ATR-E
Diodes Incorporated
ZHCS500QTA
Nexperia USA Inc.
BAS16,215
onsemi
RB521S30T1
Taiwan Semiconductor Corporation
SFAF1004G
Vishay General Semiconductor - Diodes Division
AU2PM-M3/87A
Microchip Technology
1N5551US
GeneSiC Semiconductor
MUR5010
Vishay General Semiconductor - Diodes Division
U2B-E3/5BT
onsemi