P3M06300K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 9A TO-247-3
$4.98
Available to order
Reference Price (USD)
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$4.98000
500+
$4.9302
1000+
$4.8804
1500+
$4.8306
2000+
$4.7808
2500+
$4.731
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Discover the P3M06300K3 from PN Junction Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the P3M06300K3 ensures reliable performance in demanding environments. Upgrade your circuit designs with PN Junction Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4.5A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 904 nC @ 15 V
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 38W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
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