P3M12160K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 19A TO-247-4
$8.83
Available to order
Reference Price (USD)
1+
$8.83000
500+
$8.7417
1000+
$8.6534
1500+
$8.5651
2000+
$8.4768
2500+
$8.3885
Exquisite packaging
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Optimize your power electronics with the P3M12160K4 single MOSFET from PN Junction Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the P3M12160K4 combines cutting-edge technology with PN Junction Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 19A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 110W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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