P3M171K2K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1700V 6A TO-247-3
$5.59
Available to order
Reference Price (USD)
1+
$5.59000
500+
$5.5341
1000+
$5.4782
1500+
$5.4223
2000+
$5.3664
2500+
$5.3105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The P3M171K2K3 by PN Junction Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the P3M171K2K3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 68W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
Related Products
Infineon Technologies
BSO083N03MSGXUMA1
Infineon Technologies
IRF7854TRPBF
STMicroelectronics
STP24N60M2
Vishay Siliconix
SIHF12N60E-GE3
Nexperia USA Inc.
PSMN1R6-30PL,127
Rectron USA
RM150N60HD
STMicroelectronics
STH360N4F6-2
onsemi
NTD4863N-1G
Infineon Technologies
IRLR8726TRPBF
Nexperia USA Inc.