P600M-E3/73
Vishay General Semiconductor - Diodes Division
         
                
                                Vishay General Semiconductor - Diodes Division                            
                        
                                DIODE GEN PURP 1KV 6A P600                            
                        $1.23
                            
                                
                                Available to order
                            
                        Reference Price (USD)
300+
                                            $0.56760
                                        600+
                                            $0.49060
                                        1,500+
                                            $0.40260
                                        2,100+
                                            $0.36960
                                        7,500+
                                            $0.35860
                                        Exquisite packaging
                            Discount
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                    The P600M-E3/73 by Vishay General Semiconductor - Diodes Division is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the P600M-E3/73 ensures long-term reliability even in harsh operating conditions. Trust Vishay General Semiconductor - Diodes Division for cutting-edge semiconductor solutions that drive innovation.                
            Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 150°C

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    