P6D12002E2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 2A TO252-2
$2.69
Available to order
Reference Price (USD)
1+
$2.69000
500+
$2.6631
1000+
$2.6362
1500+
$2.6093
2000+
$2.5824
2500+
$2.5555
Exquisite packaging
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Enhance your circuit performance with the P6D12002E2 single rectifier diode from PN Junction Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the P6D12002E2 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. PN Junction Semiconductor's P6D12002E2 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-252-2
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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