PBHV8110DA_R1_00001
Panjit International Inc.
Panjit International Inc.
TRANS NPN 100V 1A SOT23
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
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The PBHV8110DA_R1_00001 Bipolar Junction Transistor (BJT) by Panjit International Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PBHV8110DA_R1_00001 provides consistent performance in demanding applications. Choose Panjit International Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
- Power - Max: 1.25 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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