PBRN113ES,126
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS NPN 0.7W TO92-3
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The PBRN113ES,126 represents NXP USA Inc.'s commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 700 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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