PBSS303PZ,135
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 30V 5.3A SOT223
$0.67
Available to order
Reference Price (USD)
4,000+
$0.25500
8,000+
$0.24750
Exquisite packaging
Discount
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Enhance your circuit designs with the PBSS303PZ,135 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBSS303PZ,135 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5.3 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 265mV @ 265mA, 5.3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
- Power - Max: 2 W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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