PBSS4160V,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 60V 0.9A SOT666
$0.46
Available to order
Reference Price (USD)
4,000+
$0.08100
8,000+
$0.07650
12,000+
$0.06975
28,000+
$0.06525
100,000+
$0.06300
Exquisite packaging
Discount
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Enhance your circuit designs with the PBSS4160V,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBSS4160V,115 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 900 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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