PBSS5350S,126
NXP USA Inc.
NXP USA Inc.
TRANS PNP 50V 3A TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PBSS5350S,126 from NXP USA Inc. is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the PBSS5350S,126 is a reliable choice for both commercial and industrial use. Trust NXP USA Inc. to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 830 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Infineon Technologies
BCX51E6327HTSA1
Diodes Incorporated
FZT704TA
Bourns Inc.
TIP30C-S
Fairchild Semiconductor
PN5138
Panasonic Electronic Components
2SC3935GQL
onsemi
KSD1588RTU
Central Semiconductor Corp
TIP136
Taiwan Semiconductor Corporation
BC338-16 B1G
onsemi
MJD128T4
onsemi