PBSS5620PA,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 20V 6A 3HUSON
$0.46
Available to order
Reference Price (USD)
3,000+
$0.14520
6,000+
$0.13640
15,000+
$0.12760
30,000+
$0.12320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PBSS5620PA,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc., a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the PBSS5620PA,115 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Nexperia USA Inc. for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
Related Products
Panjit International Inc.
BC817-16W_R1_00001
Panjit International Inc.
BC849B-AU_R1_000A1
onsemi
2SD1724T
Diodes Incorporated
2DB1386Q-13
onsemi
NSS40300DDR2
Nexperia USA Inc.
BC857CM,315
Nexperia USA Inc.
BCW61D,215
Diodes Incorporated
2DA1201Y-7
onsemi
2SC5964-TD-H
Nexperia USA Inc.