PBSS5630PA,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 30V 6A 3HUSON
$0.46
Available to order
Reference Price (USD)
3,000+
$0.16720
6,000+
$0.15840
15,000+
$0.14960
30,000+
$0.14520
Exquisite packaging
Discount
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The PBSS5630PA,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PBSS5630PA,115 is a reliable component for demanding applications. Nexperia USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-PowerUDFN
- Supplier Device Package: 3-HUSON (2x2)
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