PBSS9110S,126
NXP USA Inc.
NXP USA Inc.
TRANS PNP 100V 1A TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the PBSS9110S,126 Bipolar Junction Transistor (BJT) by NXP USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the PBSS9110S,126 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NXP USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
- Power - Max: 830 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Infineon Technologies
BC80740WE6327BTSA1
onsemi
MMBT6520LT3
onsemi
KSC3488OBU
onsemi
PN5138_D26Z
Central Semiconductor Corp
CJD13003 TR13
Panasonic Electronic Components
2SA1791GRL
onsemi
P2N2222AZL1G
NXP USA Inc.
BC817-40/6235
Fairchild Semiconductor
BC558BTA
onsemi