PCP1208-TD-H
onsemi
onsemi
TRANS NPN 200V 0.7A PCP
$0.00
Available to order
Reference Price (USD)
1,000+
$0.28320
2,000+
$0.25800
5,000+
$0.24120
10,000+
$0.23840
Exquisite packaging
Discount
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Optimize your electronic systems with the PCP1208-TD-H Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PCP1208-TD-H delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 35mA, 350mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
- Power - Max: 1.3 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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