PD20010TR-E
STMicroelectronics
STMicroelectronics
TRANS N-CH 40V POWERSO-10RF FORM
$0.00
Available to order
Reference Price (USD)
600+
$12.54250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PD20010TR-E, a state-of-the-art RF MOSFET transistor from STMicroelectronics, designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The PD20010TR-E combines cutting-edge semiconductor technology with STMicroelectronics's rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the PD20010TR-E into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 11dB
- Voltage - Test: 13.6 V
- Current Rating (Amps): 5A
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 10W
- Voltage - Rated: 40 V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
Related Products
Ampleon USA Inc.
BLF6G27L-40P,112
Infineon Technologies
PTFA212001EV4R250XTMA1
STMicroelectronics
STAC2932B
Ampleon USA Inc.
BLL6G1214L-250,112
NXP USA Inc.
AFT09S200W02NR3
NXP USA Inc.
ON5234,118
STMicroelectronics
SD2933-03
Infineon Technologies
PTFA260851E V1
NXP USA Inc.
PRFX1K80HR5
Ampleon USA Inc.