PDTA113ES,126
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 500MW TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, PDTA113ES,126 offers unmatched convenience. NXP USA Inc.'s pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Fairchild Semiconductor
FJN4310RTA
Infineon Technologies
BCR 103T E6327
Panasonic Electronic Components
UNR9113J0L
Panasonic Electronic Components
DRC9115T0L
onsemi
FJY4005R
Toshiba Semiconductor and Storage
RN1113CT(TPL3)
Panasonic Electronic Components
UNR91AMG0L
Panasonic Electronic Components
DRC2114W0L
Infineon Technologies
BCR166E6327
Panasonic Electronic Components