PDTA114EEAF
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 150MW SC-75
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NXP USA Inc.'s PDTA114EEAF redefines reliability in the Transistors - Bipolar (BJT) - Single, Pre-Biased category. With built-in bias resistors, this component accelerates prototyping while maintaining signal integrity. Key features include 1) 300mA collector current capacity 2) Wide operating temperature range (-55 C to +150 C) 3) RoHS compliance. Implement in motor control systems, sensor interfaces, or battery-powered devices for optimal results.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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