PDTA114YS,126
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 500MW TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PDTA114YS,126 represents NXP USA Inc.'s commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Infineon Technologies
BCR 149T E6327
Infineon Technologies
BCR 198F E6327
Panasonic Electronic Components
DRC3123E0L
Toshiba Semiconductor and Storage
RN1102CT(TPL3)
Panasonic Electronic Components
UNR511900L
Toshiba Semiconductor and Storage
RN2105MFV,L3F
Infineon Technologies
BCR505E6778HTSA1
onsemi
FJN3315RBU
Panasonic Electronic Components
DRC9A14E0L
Rohm Semiconductor