PDTA123ETVL
Nexperia USA Inc.
Nexperia USA Inc.
PDTA123ET/SOT23/TO-236AB
$0.17
Available to order
Reference Price (USD)
10,000+
$0.02360
30,000+
$0.02124
50,000+
$0.01888
100,000+
$0.01770
250,000+
$0.01652
Exquisite packaging
Discount
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Engineers choose PDTA123ETVL for its exceptional linearity in amplification circuits. Nexperia USA Inc.'s pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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