PDTA123TT,215
NXP Semiconductors

NXP Semiconductors
NEXPERIA PDTA123TT - SMALL SIGNA
$0.02
Available to order
Reference Price (USD)
3,000+
$0.03304
Exquisite packaging
Discount
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The PDTA123TT,215 Bipolar Junction Transistor (BJT) by NXP Semiconductors is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PDTA123TT,215 provides consistent performance in demanding applications. Choose NXP Semiconductors for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -