PDTC114YM315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTC114YM - SMALL S
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with NXP USA Inc.'s PDTC114YM315, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. NXP USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
Related Products
Panasonic Electronic Components
DRA5115E0L
Panasonic Electronic Components
UNR9216J0L
Panasonic Electronic Components
UNR511M00L
onsemi
FJN4306RTA
NXP USA Inc.
PBRN123EK,115
Panasonic Electronic Components
UNR921KJ0L
Panasonic Electronic Components
UNR9211J0L
Infineon Technologies
BCR 192F E6327
onsemi
FJY3013R
Rohm Semiconductor