PDTC144ET/DG/B4,21
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Nexperia USA Inc.'s PDTC144ET/DG/B4,21, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Nexperia USA Inc. delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
onsemi
FJNS3205RTA
Diodes Incorporated
DDTC143ECA-7
Panasonic Electronic Components
UNR511800L
Panasonic Electronic Components
DRC2143T0L
Rohm Semiconductor
DTC314TUT106
NXP USA Inc.
PDTC143XEF,115
Rohm Semiconductor
DTA123JKAT246
Panasonic Electronic Components
UNR911NJ0L
Panasonic Electronic Components
UNR521600L
Toshiba Semiconductor and Storage