PE29102A-X
pSemi
pSemi
IC GATE DRVR HALF-BRIDGE DIE
$0.00
Available to order
Reference Price (USD)
500+
$2.24100
1,000+
$1.89000
2,500+
$1.79550
5,000+
$1.72800
Exquisite packaging
Discount
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Optimize your power systems with pSemi's PE29102A-X, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The PE29102A-X demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4V ~ 6V
- Logic Voltage - VIL, VIH: 0.6V, 1.6V
- Current - Peak Output (Source, Sink): 2A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 100 V
- Rise / Fall Time (Typ): 900ps, 900ps
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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