PEMD48,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP 50V SOT666
$0.39
Available to order
Reference Price (USD)
4,000+
$0.06831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PEMD48,115 from Nexperia USA Inc. is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the PEMD48,115 ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Nexperia USA Inc.'s PEMD48,115 delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms, 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Toshiba Semiconductor and Storage
RN4984FE,LXHF(CT
Nexperia USA Inc.
PUMH7F
Panasonic Electronic Components
DMC566050R
Nexperia USA Inc.
PRMH13Z
Nexperia USA Inc.
PEMH20,115
onsemi
NSVBC114EPDXV6T1G
Rohm Semiconductor
FMG1AT148
Toshiba Semiconductor and Storage
RN1973(TE85L,F)
onsemi
SMUN5113DW1T1G
onsemi