PHB38N02LT,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 44.7A D2PAK
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Upgrade your designs with the PHB38N02LT,118 by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PHB38N02LT,118 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 44.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 5 V
- Vgs (Max): 12V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 57.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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