PHD21N06LT,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 55V 19A DPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the PHD21N06LT,118 by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PHD21N06LT,118 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPP60R520E6
Rohm Semiconductor
R6030ENZ1C9
Renesas Electronics America Inc
RJK4514DPK-00#T0
IXYS
IXTV30N60P
Alpha & Omega Semiconductor Inc.
AOT270L
Alpha & Omega Semiconductor Inc.
AON6506
Alpha & Omega Semiconductor Inc.
AOT474_002
Infineon Technologies
IPG20N06S2L-35AATMA1
Infineon Technologies
IRFHM4226TRPBF
onsemi