PHE13003C,126
WeEn Semiconductors
WeEn Semiconductors
TRANS NPN 400V 1.5A TO92-3
$0.44
Available to order
Reference Price (USD)
10,000+
$0.07747
30,000+
$0.07247
50,000+
$0.06664
Exquisite packaging
Discount
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The PHE13003C,126 Bipolar Junction Transistor (BJT) by WeEn Semiconductors is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the PHE13003C,126 provides consistent performance in demanding applications. Choose WeEn Semiconductors for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Power - Max: 2.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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